PJS6600_S1_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the next level of semiconductor technology with Panjit International Inc. s PJS6600_S1_00001, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for PJS6600_S1_00001.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.1A (Ta)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V, 370mOhm @ 1.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V, 125pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
Related Products
Alpha & Omega Semiconductor Inc.
AON7804
Advanced Linear Devices Inc.
ALD110802SCL
Vishay Siliconix
SQJ980AEP-T1_GE3
Diodes Incorporated
BSS138DWK-7
Vishay Siliconix
SIZ322DT-T1-GE3
Vishay Siliconix
SQJ244EP-T1_GE3
Diodes Incorporated
DMN3032LFDBQ-7
Sanyo
CPH3307-TL-E
onsemi
ECH8693R-TL-W
onsemi