PJQ5425_R2_00001
Panjit International Inc.
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$1.21
Available to order
Reference Price (USD)
1+
$1.21000
500+
$1.1979
1000+
$1.1858
1500+
$1.1737
2000+
$1.1616
2500+
$1.1495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PJQ5425_R2_00001 by Panjit International Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PJQ5425_R2_00001 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
SIS862ADN-T1-GE3
Renesas Electronics America Inc
RJK0236DPA-00#J5A
Fairchild Semiconductor
FDP75N08
Renesas Electronics America Inc
RJK0364DPA-00#J0
Vishay Siliconix
IRFZ44PBF-BE3
onsemi
NTD4856N-35G
Infineon Technologies
IRFU220NPBF
onsemi
BSS123
Infineon Technologies
BSS314PEH6327XTSA1
onsemi