PJP8NA65A_T0_00001
Panjit International Inc.
Panjit International Inc.
650V N-CHANNEL MOSFET
$1.10
Available to order
Reference Price (USD)
1+
$1.10000
500+
$1.089
1000+
$1.078
1500+
$1.067
2000+
$1.056
2500+
$1.045
Exquisite packaging
Discount
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Panjit International Inc. presents PJP8NA65A_T0_00001, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PJP8NA65A_T0_00001 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 145W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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