PJD10N10_L2_00001
Panjit International Inc.
Panjit International Inc.
100V N-CHANNEL MOSFET
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
Discount
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PJD10N10_L2_00001 by Panjit International Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PJD10N10_L2_00001 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 34.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 34.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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