PJA3476_R1_00001
Panjit International Inc.
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PJA3476_R1_00001, a premium Transistors - FETs, MOSFETs - Single from Panjit International Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PJA3476_R1_00001 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IRLR120NTRLPBF
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2301F-F2-0000HF
Vishay Siliconix
SIHP22N60AE-GE3
STMicroelectronics
STP62NS04Z
Diodes Incorporated
ZXMP7A17KQTC
IXYS
IXFN170N25X3
onsemi
ECH8656-TL-H
onsemi
FDBL0090N40
Alpha & Omega Semiconductor Inc.
AOI2N60A
IXYS