PDTD143EQAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN 3DFN
$0.06
Available to order
Reference Price (USD)
5,000+
$0.05080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the PDTD143EQAZ from Nexperia USA Inc. for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. Nexperia USA Inc. is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 210 MHz
- Power - Max: 325 mW
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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