PDTD113EK,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 250MW SMT3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTD113EK,115 by NXP USA Inc. is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. NXP USA Inc. ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
Related Products
NXP USA Inc.
PDTA123JK,115
NXP USA Inc.
PDTA143XK,115
Fairchild Semiconductor
FJV3114RMTF
Diodes Incorporated
ADTC113TCAQ-13
Panasonic Electronic Components
UNR411200A
Toshiba Semiconductor and Storage
RN2104ACT(TPL3)
Panasonic Electronic Components
UNR511LG0L
Diodes Incorporated
DDTC114TUA-7
Panasonic Electronic Components
UNR511D00L
Panasonic Electronic Components