PDTC123JS,126
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 500MW TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your projects with the PDTC123JS,126 by NXP USA Inc., a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. NXP USA Inc. guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Fairchild Semiconductor
FJN4314RBU
Panasonic Electronic Components
UNR9216J0L
Infineon Technologies
BCR 153T E6327
Panasonic Electronic Components
DRC2523Y0L
Panasonic Electronic Components
DRA9152Z0L
Panasonic Electronic Components
UNR222400L
Panasonic Electronic Components
UNR212X00L
NXP USA Inc.
PDTA124ES,126
Diodes Incorporated
DDTC125TKA-7-F
Diodes Incorporated