PDTC114TEF,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC89
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The PDTC114TEF,115 from NXP USA Inc. is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose NXP USA Inc. for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SC-89
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