PDTC114EE,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your projects with the PDTC114EE,115 by NXP USA Inc., a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. NXP USA Inc. guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
Related Products
Panasonic Electronic Components
UNR911HG0L
Panasonic Electronic Components
DRA5L14Y0L
Panasonic Electronic Components
DRC2124X0L
Panasonic Electronic Components
DRA9143X0L
NXP USA Inc.
PDTA114EK,115
Panasonic Electronic Components
DRC2113Z0L
Toshiba Semiconductor and Storage
RN1102ACT(TPL3)
Diodes Incorporated
DDTC123ECA-7
NXP USA Inc.
PDTC124TS,126
Infineon Technologies