PDTA115ES,126
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 500MW TO92-3
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Boost your electronic projects with the PDTA115ES,126 from NXP USA Inc., a key player in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer superior performance with features like high switching speed, low power loss, and reliable operation. Ideal for automotive electronics, industrial automation, and consumer gadgets. NXP USA Inc. ensures top-quality components for your needs. Contact us for more information or to request samples!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 20 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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