PD20010S-E
STMicroelectronics
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with PD20010S-E from STMicroelectronics. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2GHz
- Gain: 11dB
- Voltage - Test: 13.6 V
- Current Rating (Amps): 5A
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 10W
- Voltage - Rated: 40 V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- Supplier Device Package: PowerSO-10RF (Straight Lead)
Related Products
Microsemi Corporation
ARF448AG
NXP USA Inc.
MRFG35003MT1
Broadcom Limited
ATF-541M4-BLK
NXP USA Inc.
MRF6V4300NR5
NXP USA Inc.
MRF6VP3091NBR5
NXP USA Inc.
MRF6S19120HSR3
NXP USA Inc.
MRF8S8260HR3
Ampleon USA Inc.
BLF6G15L-500H,112
NXP USA Inc.
MRF6VP3091NR1
Ampleon USA Inc.