PCDH20120G1_T0_00601
Panjit International Inc.
Panjit International Inc.
1200V SIC SCHOTTKY BARRIER DIODE
$13.49
Available to order
Reference Price (USD)
1+
$13.49000
500+
$13.3551
1000+
$13.2202
1500+
$13.0853
2000+
$12.9504
2500+
$12.8155
Exquisite packaging
Discount
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Experience next-level performance with Panjit International Inc.'s PCDH20120G1_T0_00601 Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Panjit International Inc. stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
- Capacitance @ Vr, F: 1023pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD-2
- Operating Temperature - Junction: -55°C ~ 175°C
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