PBSS5580PA,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 80V 4A 3HUSON
$0.55
Available to order
Reference Price (USD)
3,000+
$0.15105
6,000+
$0.14310
15,000+
$0.13515
30,000+
$0.13118
Exquisite packaging
Discount
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Upgrade your electronic projects with PBSS5580PA,115 by Nexperia USA Inc., a top choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single offer superior performance with features like low noise and high gain, making them suitable for a wide range of applications. Whether you're working on consumer electronics or industrial systems, PBSS5580PA,115 provides the reliability you need. Ready to enhance your designs? Submit an inquiry now and experience the Nexperia USA Inc. difference.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 420mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 110MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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