PBSS5350THR
Nexperia USA Inc.
Nexperia USA Inc.
PBSS5350TH/SOT23/TO-236AB
$0.43
Available to order
Reference Price (USD)
3,000+
$0.11316
6,000+
$0.10764
15,000+
$0.09936
30,000+
$0.09384
75,000+
$0.09108
Exquisite packaging
Discount
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Experience superior performance with PBSS5350THR from Nexperia USA Inc., a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, PBSS5350THR is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3A, 2V
- Power - Max: 1.44 W
- Frequency - Transition: 100MHz
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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