PBSS5230QAZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS5230QA - 30 V, 2 A
$0.06
Available to order
Reference Price (USD)
5,000+
$0.10160
Exquisite packaging
Discount
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Trust PBSS5230QAZ by NXP Semiconductors for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, PBSS5230QAZ ensures reliability. Get in touch today to request a quote and see why NXP Semiconductors is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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