PBSS5160QAZ
NXP Semiconductors
NXP Semiconductors
PBSS5160QA - 60 V, 1 A PNP LOW V
$0.06
Available to order
Reference Price (USD)
5,000+
$0.09282
10,000+
$0.08568
25,000+
$0.08092
50,000+
$0.07854
Exquisite packaging
Discount
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Experience superior performance with PBSS5160QAZ from NXP Semiconductors, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, PBSS5160QAZ is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 460mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V
- Power - Max: 325 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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