PBSS4350SPN,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PBSS4350SPN - SMALL
$0.15
Available to order
Reference Price (USD)
1,000+
$0.22100
2,000+
$0.20150
5,000+
$0.18850
10,000+
$0.18200
Exquisite packaging
Discount
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Discover high-performance PBSS4350SPN,115 Bipolar Junction Transistor Arrays from NXP USA Inc., designed for reliable and efficient circuit applications. These transistor arrays feature excellent current handling, low saturation voltage, and high-speed switching capabilities, making them ideal for amplification and switching tasks. Perfect for use in industrial automation, consumer electronics, and communication devices. Contact us today for a quote and let our experts assist you with your specific requirements!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 2.7A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A, 370mV @ 270mA, 2.7A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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