PBRN123EK,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 250MW SMT3
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The PBRN123EK,115 by NXP USA Inc. is a high-performance solution in the Discrete Semiconductor Products sector. These Transistors - Bipolar (BJT) - Single, Pre-Biased are crafted for excellence, featuring high efficiency, low thermal resistance, and long lifespan. Perfect for use in power converters, lighting systems, and communication devices. NXP USA Inc. guarantees superior products and support. Get in touch today to explore our offerings!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
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