P3M173K0F3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1700V 1.97A TO-220F-
$5.08
Available to order
Reference Price (USD)
1+
$5.08000
500+
$5.0292
1000+
$4.9784
1500+
$4.9276
2000+
$4.8768
2500+
$4.826
Exquisite packaging
Discount
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Boost your electronic applications with P3M173K0F3, a reliable Transistors - FETs, MOSFETs - Single by PN Junction Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, P3M173K0F3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 1.97A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 0.25A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 1.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 19W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-2L
- Package / Case: TO-220F-2
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