Shopping cart

Subtotal: $0.00

NXPSC04650B6J

WeEn Semiconductors
NXPSC04650B6J Preview
WeEn Semiconductors
DIODE SCHOTTKY 650V 4A D2PAK
$2.85
Available to order
Reference Price (USD)
1+
$2.85000
500+
$2.8215
1000+
$2.793
1500+
$2.7645
2000+
$2.736
2500+
$2.7075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 170 µA @ 650 V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)

Related Products

Microchip Technology

UFS520JE3/TR13

Vishay General Semiconductor - Diodes Division

GI250-2-E3/54

Panjit International Inc.

MB24_R1_00001

Rohm Semiconductor

RFN1LAM6STFTR

Vishay General Semiconductor - Diodes Division

BYG10G-M3/TR3

Nexperia USA Inc.

PMEG6030ETP-QX

Microchip Technology

JANTXV1N6623/TR

Vishay General Semiconductor - Diodes Division

SS3P3LHM3_A/H

Toshiba Semiconductor and Storage

CRS08(TE85L,Q,M)

Top