NXH200T120H3Q2F2STG
onsemi
onsemi
80KW GEN-II Q2PACK-200A MODULE (
$134.43
Available to order
Reference Price (USD)
1+
$134.43333
500+
$133.0889967
1000+
$131.7446634
1500+
$130.4003301
2000+
$129.0559968
2500+
$127.7116635
Exquisite packaging
Discount
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The NXH200T120H3Q2F2STG IGBT Module from onsemi delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust onsemi for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 330 A
- Power - Max: 679 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM/Q2PACK (93x47)
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