NVTYS008N06CLTWG
onsemi
onsemi
T6 60V N-CH LL IN LFPAK33
$0.93
Available to order
Reference Price (USD)
1+
$0.93228
500+
$0.9229572
1000+
$0.9136344
1500+
$0.9043116
2000+
$0.8949888
2500+
$0.885666
Exquisite packaging
Discount
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Experience the power of NVTYS008N06CLTWG, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NVTYS008N06CLTWG is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 56W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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