NVTYS004N03CLTWG
onsemi
onsemi
T6 30V N-CH LL IN LFPAK33
$0.88
Available to order
Reference Price (USD)
1+
$0.88001
500+
$0.8712099
1000+
$0.8624098
1500+
$0.8536097
2000+
$0.8448096
2500+
$0.8360095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with NVTYS004N03CLTWG by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NVTYS004N03CLTWG ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 51.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
Related Products
Toshiba Semiconductor and Storage
SSM3K37MFV,L3F
Diodes Incorporated
ZXMN6A08GQTC
STMicroelectronics
STB130N6F7
Infineon Technologies
IRFU4615PBF
Diodes Incorporated
ZXMP10A17E6TA
Panjit International Inc.
PJQ4410P_R2_00001
Renesas Electronics America Inc
NP100N055PUK-E1-AY
Vishay Siliconix
SUP90140E-GE3
Texas Instruments
CSD19534Q5AT
Toshiba Semiconductor and Storage