NVTFS6H850NTAG
onsemi
onsemi
MOSFET N-CH 80V 11A/68A 8WDFN
$1.08
Available to order
Reference Price (USD)
1,500+
$0.48989
3,000+
$0.45723
7,500+
$0.43437
10,500+
$0.41804
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVTFS6H850NTAG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVTFS6H850NTAG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
STMicroelectronics
STH80N10LF7-2AG
IXYS
IXFK50N50
onsemi
NTJS4160NT1G
onsemi
NVTYS005N06CLTWG
Infineon Technologies
IPD082N10N3GATMA1
onsemi
FDT1600N10ALZ
Infineon Technologies
IRFH3707TRPBF
Fairchild Semiconductor
SI3456DV
Infineon Technologies
IPB120N04S4L02ATMA1
Microchip Technology