NVMFWS0D5N04XMT1G
onsemi
onsemi
40V T10M IN S08FL GEN 2 PACKAGE
$2.15
Available to order
Reference Price (USD)
1+
$2.14845
500+
$2.1269655
1000+
$2.105481
1500+
$2.0839965
2000+
$2.062512
2500+
$2.0410275
Exquisite packaging
Discount
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Discover high-performance NVMFWS0D5N04XMT1G from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NVMFWS0D5N04XMT1G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 163W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerTDFN