NVJS3151PT1G
onsemi
onsemi
MOSFET P-CH 12V 2.7A SC88
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with NVJS3151PT1G by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NVJS3151PT1G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88/SC70-6/SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Alpha & Omega Semiconductor Inc.
AON6440
EPC
EPC2030ENGRT
Infineon Technologies
IPU105N03L G
onsemi
FDU8782
Infineon Technologies
IRFR13N20DTRLP
IXYS
IXFV22N50P
IXYS
IXTQ200N06P
Vishay Siliconix
IRL3202L
Rohm Semiconductor
2SK2713
STMicroelectronics