NVHL080N120SC1A
onsemi
onsemi
SICFET N-CH 1200V 31A TO247-3
$14.08
Available to order
Reference Price (USD)
1+
$14.08000
500+
$13.9392
1000+
$13.7984
1500+
$13.6576
2000+
$13.5168
2500+
$13.376
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NVHL080N120SC1A, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
- Vgs (Max): +25, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SI4477DY-T1-GE3
Toshiba Semiconductor and Storage
TPH1R712MD,L1Q
Infineon Technologies
AUIRFB8407
STMicroelectronics
STB140NF55T4
Infineon Technologies
IPD075N03LGATMA1
Fairchild Semiconductor
FDD8780
Toshiba Semiconductor and Storage
TK10A60W,S4VX
Toshiba Semiconductor and Storage
SSM6J213FE(TE85L,F
Infineon Technologies
IRLZ34NSTRLPBF
Alpha & Omega Semiconductor Inc.