NVDSH20120C
onsemi
onsemi
SIC DIODE GEN2.0 1200V TO247-2L
$11.53
Available to order
Reference Price (USD)
1+
$11.52751
500+
$11.4122349
1000+
$11.2969598
1500+
$11.1816847
2000+
$11.0664096
2500+
$10.9511345
Exquisite packaging
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Experience next-level performance with onsemi's NVDSH20120C Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. onsemi stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 26A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Capacitance @ Vr, F: 1480pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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