NVD4856NT4G-VF01
onsemi
onsemi
MOSFET N-CH 25V 13.3A/89A DPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVD4856NT4G-VF01 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVD4856NT4G-VF01 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Alpha & Omega Semiconductor Inc.
AON2400
Vishay Siliconix
SI1450DH-T1-E3
onsemi
NVD5802NT4G
STMicroelectronics
STW11NB80
Fairchild Semiconductor
HUF75945P3
Diodes Incorporated
2N7002T-7-G
IXYS
IXFR80N10Q
Infineon Technologies
SPP100N03S2L03
Infineon Technologies
IRL2505SPBF
Infineon Technologies