NVB60N06T4G
onsemi

onsemi
MOSFET N-CH 60V 60A D2PAK
$1.32
Available to order
Reference Price (USD)
1+
$1.32000
500+
$1.3068
1000+
$1.2936
1500+
$1.2804
2000+
$1.2672
2500+
$1.254
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NVB60N06T4G, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NVB60N06T4G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB