NTS4173PT1G
onsemi
onsemi
MOSFET P-CH 30V 1.2A SC70-3
$0.42
Available to order
Reference Price (USD)
3,000+
$0.11903
6,000+
$0.11270
15,000+
$0.10321
30,000+
$0.09689
75,000+
$0.08740
Exquisite packaging
Discount
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onsemi presents NTS4173PT1G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTS4173PT1G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 290mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3 (SOT323)
- Package / Case: SC-70, SOT-323
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