Shopping cart

Subtotal: $0.00

NTR4101PT1H

onsemi
NTR4101PT1H Preview
onsemi
MOSFET P-CH 20V 1.8A SOT23-3
$0.57
Available to order
Reference Price (USD)
3,000+
$0.11385
6,000+
$0.10780
15,000+
$0.09873
30,000+
$0.09268
75,000+
$0.08360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 420mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Infineon Technologies

IRF1010ZPBF

Nexperia USA Inc.

2N7002BKVL

Rohm Semiconductor

RSY160P05TL

Nexperia USA Inc.

BUK7Y43-60EX

Microchip Technology

TN0110N3-G-P002

Alpha & Omega Semiconductor Inc.

AONS62614T

Vishay Siliconix

IRFI840GLCPBF

Rohm Semiconductor

RCJ200N20TL

Infineon Technologies

IPB60R210CFD7ATMA1

Top