NTP60N06L
onsemi
onsemi
MOSFET N-CH 60V 60A TO220AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTP60N06L by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTP60N06L inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 3075 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
2N7002WKX-7
Vishay Siliconix
IRF9Z14STRR
Infineon Technologies
ISZ0901NLSATMA1
Infineon Technologies
AUIRFS3207Z-INF
onsemi
HUFA75343S3S
Fairchild Semiconductor
FDG316P
Infineon Technologies
IRF7490PBF
IXYS
IXTV250N075T
Infineon Technologies
IPB023N04NGATMA1
Alpha & Omega Semiconductor Inc.