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NTP165N65S3H

onsemi
NTP165N65S3H Preview
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$3.68
Available to order
Reference Price (USD)
1+
$3.68000
500+
$3.6432
1000+
$3.6064
1500+
$3.5696
2000+
$3.5328
2500+
$3.496
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 142W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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