NTMFS6H800NLT1G
onsemi
onsemi
MOSFET N-CH 80V 30A/224A 5DFN
$1.92
Available to order
Reference Price (USD)
1+
$1.92439
500+
$1.9051461
1000+
$1.8859022
1500+
$1.8666583
2000+
$1.8474144
2500+
$1.8281705
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMFS6H800NLT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMFS6H800NLT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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