NTMFS4C808NAT3G
onsemi
onsemi
TRENCH 6 30V NCH
$0.50
Available to order
Reference Price (USD)
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$0.50035
500+
$0.4953465
1000+
$0.490343
1500+
$0.4853395
2000+
$0.480336
2500+
$0.4753325
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMFS4C808NAT3G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMFS4C808NAT3G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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