NTMFS4C08NT1G
onsemi
onsemi
MOSFET N-CH 30V 9A/52A 5DFN
$1.35
Available to order
Reference Price (USD)
1+
$1.35000
500+
$1.3365
1000+
$1.323
1500+
$1.3095
2000+
$1.296
2500+
$1.2825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NTMFS4C08NT1G, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
IXYS
IXTP200N055T2
onsemi
NVTFS9D6P04M8LTAG
Alpha & Omega Semiconductor Inc.
AOSS21311C
Vishay Siliconix
SQS840EN-T1_GE3
Nexperia USA Inc.
BUK762R7-30B,118
STMicroelectronics
STP46NF30
Diodes Incorporated
BSS138-13-F
Nexperia USA Inc.
2N7002CK,215
Vishay Siliconix
SIRA14DP-T1-GE3
Panjit International Inc.