NTMFS0D7N03CGT1G
onsemi
onsemi
MOSFET N-CH 30V 59A/409A 5DFN
$2.77
Available to order
Reference Price (USD)
1+
$2.77200
500+
$2.74428
1000+
$2.71656
1500+
$2.68884
2000+
$2.66112
2500+
$2.6334
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMFS0D7N03CGT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMFS0D7N03CGT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Ta), 409A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.65mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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