Shopping cart

Subtotal: $0.00

NTE2389

NTE Electronics, Inc
NTE2389 Preview
NTE Electronics, Inc
MOSFET N-CHANNEL 60V 35A TO220
$7.67
Available to order
Reference Price (USD)
1+
$7.67000
500+
$7.5933
1000+
$7.5166
1500+
$7.4399
2000+
$7.3632
2500+
$7.2865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Ta)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Related Products

Alpha & Omega Semiconductor Inc.

AOI468

Vishay Siliconix

SIJA72ADP-T1-GE3

NXP USA Inc.

PMV56XN,215

Panasonic Electronic Components

FJ3P02100L

Infineon Technologies

IPP034N03LGXKSA1

Rohm Semiconductor

RD3S100CNTL1

Diodes Incorporated

DMN3066L-13

Vishay Siliconix

SQJ420EP-T1_GE3

Top