NTD4960N-35G
onsemi
onsemi
MOSFET N-CH 30V 8.9A/55A IPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTD4960N-35G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTD4960N-35G inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.07W (Ta), 35.71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Vishay Siliconix
2N6660JTXV02
Infineon Technologies
BUZ31L
Infineon Technologies
AUIRF7207Q
IXYS
IXTY64N055T
Infineon Technologies
IRL3714ZSTRRPBF
Infineon Technologies
IRFZ48ZPBF
Infineon Technologies
IRF3709LPBF
NXP USA Inc.
PHD55N03LTA,118
Infineon Technologies
IRF7453PBF
NXP USA Inc.