NTD4302G
onsemi
onsemi
MOSFET N-CH 30V 8.4A/68A DPAK
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTD4302G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTD4302G inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPD60R460CEAUMA1
Fairchild Semiconductor
FDB2570
Diodes Incorporated
DMP3037LSS-13
Rohm Semiconductor
RSF015N06TL
Infineon Technologies
IPP024N06N3G
Toshiba Semiconductor and Storage
TK22E10N1,S1X
Vishay Siliconix
IRFI520GPBF
Infineon Technologies
BSD214SNH6327XTSA1
Vishay Siliconix
SI3460BDV-T1-E3
Diodes Incorporated