NTD23N03RT4G
onsemi
onsemi
MOSFET N-CH 25V 3.8A/17.1A DPAK
$0.10
Available to order
Reference Price (USD)
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500+
$0.099
1000+
$0.098
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$0.097
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$0.096
2500+
$0.095
Exquisite packaging
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Boost your electronic applications with NTD23N03RT4G, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NTD23N03RT4G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.76 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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