NTBGS001N06C
onsemi
onsemi
POWER MOSFET, 60 V, 1.1 M?, 342
$15.03
Available to order
Reference Price (USD)
1+
$15.03000
500+
$14.8797
1000+
$14.7294
1500+
$14.5791
2000+
$14.4288
2500+
$14.2785
Exquisite packaging
Discount
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NTBGS001N06C by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTBGS001N06C ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V
- Vgs(th) (Max) @ Id: 4V @ 562µA
- Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 245W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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