NSVDTA115EET1G
onsemi
onsemi
TRANS PREBIAS PNP 0.2W SC75-3
$0.06
Available to order
Reference Price (USD)
6,000+
$0.06482
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the NSVDTA115EET1G from onsemi for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. onsemi is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75, SOT-416
Related Products
Nexperia USA Inc.
NHDTC124ETVL
Rohm Semiconductor
DTC123YU3HZGT106
Fairchild Semiconductor
FJY3005R
Diodes Incorporated
DDTA144TCA-7-F
Panasonic Electronic Components
UNR521NG0L
Fairchild Semiconductor
FJX4006RTF
Diodes Incorporated
DDTC114YUA-7-F
Toshiba Semiconductor and Storage
RN1411,LXHF
Fairchild Semiconductor
FJV4110RMTF
onsemi