NSV40302PDR2G
onsemi
onsemi
TRANS NPN/PNP 40V 3A 8SOIC
$0.93
Available to order
Reference Price (USD)
2,500+
$0.33602
5,000+
$0.31284
12,500+
$0.30898
Exquisite packaging
Discount
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Boost your circuit performance with onsemi's NSV40302PDR2G BJT Arrays, offering exceptional reliability and versatility. These arrays provide high voltage tolerance, precise current control, and compact packaging, suitable for portable electronics and embedded systems. Frequently used in audio processing, sensor interfaces, and automation controls. Get started today send us your requirements and we ll provide the best solution for your project!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 653mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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