NP90N03VUG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 90A TO252
$1.76
Available to order
Reference Price (USD)
1+
$1.76000
500+
$1.7424
1000+
$1.7248
1500+
$1.7072
2000+
$1.6896
2500+
$1.672
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NP90N03VUG-E1-AY by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NP90N03VUG-E1-AY inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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