NP82N04MDG-S18-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 82A TO220-3
$2.16
Available to order
Reference Price (USD)
1+
$2.16000
500+
$2.1384
1000+
$2.1168
1500+
$2.0952
2000+
$2.0736
2500+
$2.052
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NP82N04MDG-S18-AY by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NP82N04MDG-S18-AY inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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