NP75P03YDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 30V 75A 8HSON
$1.96
Available to order
Reference Price (USD)
1+
$1.96000
500+
$1.9404
1000+
$1.9208
1500+
$1.9012
2000+
$1.8816
2500+
$1.862
Exquisite packaging
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NP75P03YDG-E1-AY by Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NP75P03YDG-E1-AY ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 138W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
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