NP180N055TUJ-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 55V 180A TO263-7
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with NP180N055TUJ-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NP180N055TUJ-E1-AY for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Infineon Technologies
IRFS38N20DPBF
Fairchild Semiconductor
IRFP140
onsemi
FQP18N20V2
Rohm Semiconductor
RHU003N03FRAT106
Infineon Technologies
SPI100N08S2-07
STMicroelectronics
STW33N60DM2
Diodes Incorporated
ZVP1320FTC
Renesas Electronics America Inc
NP109N055PUJ-E1B-AY
Vishay Siliconix
SIR646DP-T1-GE3
IXYS